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PTF 10031 50 Watts, 1.0 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source Available in Package 20235 as PTF 10015 100% Lot Traceability
* * * * * *
Typical Power Out & Efficiency vs. Power In
70 60 90 80 Output Power (W) Efficiency (%) 70 60 50
Output Power
50 40 30 20 10 0 0
A -1 2
1003 1
3456 9744
Package 20222
VDD = 28 V IDQ = 350 mA f = 960 MHz
1 2 3 4
40 30 20
Efficiency
Package 20235
A-1
100 15
234 561 970
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation TCASE = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) All published data at TCASE = 25C unless otherwise indicated. TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 175 1.0 -65 to 150 1.0
Unit
Vdc Vdc C Watts W/C C C/W
e
1
PTF 10031
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 350 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz-- all phase angles at frequency of test)
Symbol
Gps P-1dB h Y
Min
12.0 50 50 --
Typ
13.0 55 55 --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
Gain vs. Power Output
16 15 -25
Intermodulation Distortion vs. Power Output
-15
VDD = 28 V IDQ = 350 mA f1 = 950.000 MHz IMD (dB) f2 = 950.100 MHz
-35 5th -45 7th -55 0 10 20 30 40 50 60 70 3rd Order
Gain (dB)
14 13 12 11 10 0 10 20 30 40 50 60 70
VDD = 28 V IDQ = 350 mA f = 960 MHz
Power Output (Watts)
Output Power (Watts PEP)
2
e
Output Power vs. Supply Voltage
60
15
PTF 10031
Gain vs. Frequency
(circuit optimized at 960 M Hz)
Output Power (Watts)
55
14
50
Gain (dB)
13
45
IDQ = 350 mA f = 960 MHz
VDD = 28 V
12
IDQ = 350 m A P O UT = 50 W
40 22 24 26 28 30 32 34
11 950 960 970 980 990 1000
Drain-Source Voltage (Volts)
Fre que ncy (M Hz)
Capacitance vs. Supply Voltage
160 140 18
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00
0.43
Cds & Cgs (pF)
120 100 80 60 40 20 0 0 10
Cgs
VGS = 0 V f = 1 MHz
16 14 12 10
Voltage normalized to 1.0 V Series show current (A)
Crss (pF)
0.99 0.98 0.97 0.96 0.95 -20 5 30 55 Temp. (C) 80
1.25 2.08 2.9 3.71 4.53
Cds Crss
20 30 40
8 6 4 2
Supply Voltage (Volts)
105
Impedance Data (circuit optimized at 960 MHz)
VDD = 28 V, POUT = 50 W, IDQ = 350 mA
D
Z Source
Z Load
G S
Z0 = 50 W
Frequency
MHz 850 900 950 1000 R
Z Source W
jX -1.22 -0.44 +0.67 +1.30 R 1.38 1.20 1.08 0.96
Z Load W
jX 1.00 1.65 2.33 2.90 3 2.50 2.45 2.40 2.40
PTF 10031
Typical Scattering Parameters
(VDS = 28 V, ID = 1.0 A)
e
S11 S21 Ang
-153 -160 -163 -164 -165 -165 -164 -164 -163 -163 -163 -163 -164 -164 -165 -166 -167 -168 -170 -171 -173 -174 -176 -177 -178 -179 180 179 179 179 179 179
f (MHz)
40 60 80 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500
S12 Ang
93 85 80 76 65 58 51 45 41 36 33 30 27 26 22 21 19 16 14 12 14 8 3 6 1 4 -5 -5 -5 -3 5 -8
S22 Ang
3 1 -6 -13 -18 -23 -31 -31 -28 -33 -36 -52 -46 -53 -27 -18 -13 14 -1 30 53 59 56 69 57 65 56 61 52 59 58 62
Mag
0.883 0.878 0.876 0.884 0.904 0.915 0.934 0.947 0.962 0.975 0.974 0.977 0.979 0.985 0.981 0.980 0.975 0.973 0.972 0.969 0.966 0.969 0.969 0.970 0.970 0.970 0.971 0.971 0.973 0.973 0.972 0.965
Mag
33.0 21.8 16.1 12.8 8.21 5.67 4.36 3.41 2.78 2.30 1.90 1.65 1.44 1.28 1.14 1.01 0.924 0.809 0.749 0.656 0.609 0.564 0.526 0.450 0.405 0.383 0.351 0.330 0.308 0.255 0.219 0.210
Mag
0.014 0.013 0.012 0.012 0.011 0.010 0.010 0.010 0.008 0.008 0.006 0.006 0.005 0.004 0.003 0.004 0.003 0.001 0.003 0.003 0.002 0.003 0.004 0.004 0.005 0.005 0.005 0.005 0.005 0.006 0.006 0.006
Mag
0.527 0.533 0.553 0.574 0.638 0.694 0.769 0.792 0.837 0.873 0.874 0.912 0.916 0.925 0.933 0.933 0.936 0.946 0.939 0.946 0.948 0.945 0.949 0.955 0.953 0.952 0.959 0.957 0.963 0.965 0.965 0.957
Ang
-143 -148 -150 -148 -148 -149 -148 -149 -150 -151 -151 -152 -154 -154 -156 -157 -158 -160 -160 -162 -164 -164 -167 -167 -168 -169 -170 -170 -171 -171 -171 -172
4
e
Test Circuit
PTF 10031
Z1 = 50W
Z2 = 6.3W lo = .230
Z3 = 11.0W lo = .225
Z4 = 50W
Test Circuit Schematic for f = 960 MHz
DUT C1, C10 C2, C9 C3 C4 C5, C6 C7 C8 L1 R1, R2 R3 Circuit Board PTF 10031 36 pF, Capacitor ATC 100 B 0.3-3.5 pF, Variable Capacitor, Johanson 5.6 pF, Capacitor ATC 100 B 0.01 mF, Capacitor ATC 10,000 B 51 pF, Capacitor ATC 100 B 0.1 mF, 50 V, Capacitor Digi-Key P4917-ND 100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276 4 Turn, #20 AWG, .120" I.D. 560 W, 1/4 W Resistor 330 W, 1/4 W Resistor .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
Placement Diagram
5
PTF 10031
Test Circuit
e
Artwork (1 inch
)
Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LF (c) 1997 Ericsson Inc. EUS/KR 1301-PTF 10031 Uen Rev. B 12-14-98
6

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